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Bare Die Testing

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Bare Die

Rigorous Wafer-Level Testing

Micron’s test programs and restrictive screening criteria ensure we only supply bare die that meet rigorous specifications for functionality, quality, and reliability. In fact, our customers can be assured that Micron’s wafer-level products have passed the same stringent tests that we require for parts we package ourselves. Comprehensive functional coverage at wafer test provides high-quality die, while proprietary wafer-level stress is used to reduce infant mortalities. In addition, data from Micron’s intelligent AMBYX™ burn-in system provides detailed failure information, which is correlated to abundant wafer parametric and functional data. This enables us to predict failure rates and ensure the highest standards for KGD applications.

Because we work to understand your requirements, we are able to apply the proper amount of screening at the wafer or discrete die level. Two fully-developed test programs help us achieve an optimum balance between reliability and cost-effectiveness.

Two Levels of Testing

KGD-C1
 Micron’s standard wafer-level known good die testing (KGD-C1) provides the most cost-effective test coverage for bare die products. The quality of the bare die is verified by testing for functionality, and margin fails. The testing includes elevated-temperature probing with functional and parametric tests, and high-voltage functional stress tests. The test patterns, and test sequences are determined by product maturity and yields. This coverage is more than adequate for most bare die applications.

DRAM CMOS Image Sensors
    • SDRAM: 64Mb, 128Mb, 256Mb, and 512Mb
    • DDR SDRAM: 128Mb, 256Mb, 512Mb, and 1Gb
    • DDR2 SDRAM: 256Mb, 512Mb, and 1Gb
    • Megapixel: 1.3Mp (1/3 inch), 2Mp (1/3 and 1/4 inch), 3.1Mp, and 5Mp
    • VGA: (1/4 and 1/6 inch)

KGD-C2
 Micron has developed enhanced test coverage and reliability screening (KGD-C2) to meet the requirements of new SiP and MCP applications. Our extensive KGD-C2 program begins with the standard quality tests, including die stress, and then extends to testing die for full functionality of published AC/DC and speed specifications. This enhanced wafer-level testing ensures that Micron’s bare die products meet our highest specifications, making them what we believe to be the highest-quality known good die in the industry.

DRAM PSRAM
    • Mobile SDRAM: 64Mb, 128Mb, 256Mb, 512Mb
    • Mobile DDR SDRAM: 128Mb, 256Mb, 512Mb, 1Gb
    • CellularRAM Memory: 16Mb, 32Mb, 64Mb, and 128Mb

Separately, KGD-C1 addresses reliability and KGD-C2 addresses quality; together, these tests enable Micron to produce KGD devices that meet most application requirements.